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2011年新加坡留学网十万奖学金奖励新加坡优秀留学生!(2011-7-10)- 新加坡国立大学新设公共卫生学院 (2011-9-22)
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- 新加坡国立大学法学院双杰拼出佳绩 (2011-8-18)
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新加坡国立大学硕士项目2011/2012届录取结果揭晓!- 新加坡国立大学硕士项目2010/2011届录取结果揭晓!
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来源:GIST
The MSc Microelectronics is a highly specialized programme offered on a full-time basis for training engineers to work in silicon wafer fabrication industries, engage with the related research institutions and pursue further studies.
Students are required to take 12 modules in microelectronics topics, including 6 core modules, 4 elective modules, and 2 laboratory modules, and to complete a one-semester project. Each technical module has 45 contact hours. The project should be on a topic related to microelectronics, may be undertaken either at NTU or at TUM or in the industry. In addition, students will take an English module of 80 hours and 5 other non-technical short modules of 10 hours each. The technical modules are as follows:
Core Modules
Advanced Wafer Processing
Quality and Reliability Engineering
Advanced Topics in Semiconductor Devices
Nanoelectronics
Advanced MOSEFTs & Novel Devices
Laboratory 1: Sub-micron Semiconductor Process and Device Simulation
Laboratory 2: Integrated Circuits: Process, Device & Circuit Design
Elective Modules (Select 4)
Integrated Circuit Packaging
Failure Mechanisms in Semiconductor Devices
Silicon photonics
VLSI and ULSI Technologies
*Subject to addition/modification
Cross Discipline Modules
Business and Technical English
International Patent Law
Selected topics in Business and Administration
Selected topics in Management methods
Cultural, social and economical aspects of globalization
Aspects of European and Asian Culture and History
Modules Description
SUBJECT CONTENTS
Advanced Wafer Processing
Thin film deposition. Chemical and mechanical polishing. Lithography and resist technology. Etching process and technology. Cleaning technology. Process integration. Metrology and analytical techniques
Quality and Reliability Engineering
Quality management and planning. Statistical process control. Design of experiments. Reliability planning & statistical framework. Burn-in, FMEA and accelerated testing.
Advanced Topics in Semiconductor Devices
Bipolar transistor operating principles. Bipolar device modeling. State-of-the-art bipolar structures. MOS device operation. MOSFET modeling. MOS device scaling effects. Semiconductor memories. Semiconductor heterojunctions. Future trends and challenges.
Sub-micron Semiconductor Process and Device Simulation
The subject will cover the design and simulation for sub-micron integrated circuits and their fabrication. There will be virtual wafer fabrication, virtual device characterization and virtual process integration modules. The students will be required to carry out the design with hands-on project exercises through the use of simulation software packages.
Integrated Circuits: Process, Device & Circuit Design
Key design concepts pertaining to the fabrication and instrumentation of integrated silicon electronic circuits.
Failure Mechanisms in Semiconductor Devices
Introduction to Failure Mechanisms. Bulk failure mechanism of semiconductor devices. Dielectric failure mechanisms of semiconductor devices. Metallization failure mechanisms of semiconductor devices. Interface failure mechanisms of semiconductor devices. Reliability testing.
Integrated Circuit Packaging
Plastic packaging materials. Manufacturing processes for plastic encapsulated microelectronics. State-of-the-art packaging techniques. Failure mechanisms, sites and modes. Qualification process and accelerated testing. Effects of packaging on the electrical performance. Future trends and challenges.
Silicon Photonics
Silicon nanocrystal, silicon on insulator, light emitting diodes using silicon nanocrystal technology, lasers and modulators using silicon on insulator technology. Integrated Optoelectronics Circuits.
VLSI and ULSI Technologies
MOSFET and NMOS process technology. CMOS process technology. Bipolar process technology. MOSscaling rules and small geometry effects. CMOS isolation and latchup. MOS memory fabrication technology. Advanced VLSI and ULSI fabrication technologies.
Admission requirements
Good bachelor’s degree in electrical/electronic engineering or equivalent degree in other relevant disciplines as the Board of Graduate Studies may approve.
Preferably for those who have at least 6 months of relevant working experience.
Tuition fees
The tuition fee per semester for the ME (M.Sc.) programme is SGD 10,000
This fee is including:
·matriculation fees at relevant universities, teaching and examination fees
·lab materials and expenses
·expenses for intercultural program, including tickets for events and industry excursions
·all fees for scripts, excluding text books
·usage of all university facilities at TUM and NUS / NTU or relevant universities like??? library fees
·all administration fees
·fees for computer and internet access
·excursion and off-campus expenses for mandatory events
Fees charged do not depend on nationality. Our institute acts according to its non-discrimination policy.
Tuition fees are subject to change by action of the supervising boards.
Goods & Services Tax in Singapore (GST) is chargeable on the total tuition fee. It is waived only for international students sponsored by foreign companies.
The total tuition fee is payable to the German Institute of Science and Technology (GIST) in three equal instalment payments. The payment schedule is as follows:
1st payment is due in July upon confirmation or admission to the programme
2nd payment is due in January
3rd payment is due at the end of June

境内服务项目包括:
境外服务项目包括:
新加坡留学网 - SIECC
Singapore International Education Consultation Center
权威专业的留学信息服务平台
通信地址:北京市朝阳区南磨房路37号华腾北搪大厦612单元 邮编:100022
免长途费:400-652-8889
直拨电话:010-85895846
直拨电话:010-51908414/34 传真号码:010-51908414转603











恭喜!王同学 获得 [ 新加坡国立大学 ] 硕士OFFER!(4)(2011-08-9)




















